DF10G6M4N
ESD Protection Diodes Silicon Epitaxial Planar
1. Applications
ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
DFN10
1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air)
VESD
(Note 1)
±20 ±20 k V
Peak pulse power (tp = 8/20 µs) Peak pulse current (tp = 8/20 µs) Junction temperature Storage temperature
PPK IPP (Note 2) Tj Tstg
30 2 150 -55 to 150
W A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this...
