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DF2B20M4SL - ESD Protection Diodes

Key Features

  • (1) Suitable for high working voltage line. (VRWM ≤ 18.5 V) (2) Protects devices with its high ESD performance. (VESD = ±15 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.2 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 26 V@IPP = 0.5 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 m.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESD Protection Diodes Silicon Epitaxial Planar DF2B20M4SL DF2B20M4SL 1. General The DF2B20M4SL is a bidirectional TVS diode with high VRWM(18.5V) designed to protect high speed line or differential signal line from the damage caused by ESD and other transients voltage. This TVS diode can protect the latter part well by the low dynamic resistance, improve the system reliability level by the high VESD performance. It is optimum for antennal application such as NFC for the low capacitance performance. And the small package size (0.62 mm × 0.32 mm) is ideal for high-density mounting. 2.