• Part: DF2B6.8M1ACT
  • Description: ESD Protection Diodes
  • Category: Diode
  • Manufacturer: Toshiba
  • Size: 262.30 KB
Download DF2B6.8M1ACT Datasheet PDF
Toshiba
DF2B6.8M1ACT
ESD Protection Diodes Silicon Epitaxial Planar 1. Applications - ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage(IEC61000-4-2)(Contact) VESD ±8 k V Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon...