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DF2B7M3SL - ESD Protection Diodes

Features

  • (1) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±12 kV (Contact), VESD = ±15 kV (Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ. )) (4) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm × 0.32 mm size (Nickname: SL2)) 4. Packaging SL2 ©2017-2018 Toshiba Electronic Devices & Storage Corpora.

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Datasheet Details

Part number DF2B7M3SL
Manufacturer Toshiba
File Size 323.83 KB
Description ESD Protection Diodes
Datasheet download datasheet DF2B7M3SL Datasheet
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ESD Protection Diodes Silicon Epitaxial Planar DF2B7M3SL DF2B7M3SL 1. General The DF2B7M3SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2B7M3SL provide to protect the latter part well by the low dynamic resistance, improve the system reliability level by the high VESD performance. Furthermore, it is optimum for antenna application for the low capacitance performance. The DF2B7M3SL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a small footprint. 2.
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