DF2S6.8UFS Datasheet | Toshiba

ESD Protection Diodes Silicon Epitaxial Planar 1. Applications - ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit SOD-923 1: Cathode 2: Anode 1: Cathode 2: Anode f SC The SOD-923 package is remended. Package Product name SOD-923 f SC DF2S6.8UFS,L3M (Note 1) DF2S6.8UFS,L3J , DF2S6.8UFS,L3F Note 1: The product name of the devices housed in the SOD-923 package are suffixed with the "M". Start of mercial production 2007-01 1 2014-07-23 Rev.5.0 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±8 k V Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4. Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage VR: Reverse voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance IF: Forward current VF: Forward voltage Fig. 4.1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max...