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DSR05S30CTB - Silicon Epitaxial Schottky Barrier Type Diode

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Part number DSR05S30CTB
Manufacturer Toshiba Semiconductor
File Size 167.32 KB
Description Silicon Epitaxial Schottky Barrier Type Diode
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DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500＊ 5 125 −55 to 125 V mA A °C °C 0.05±0.03 0.8±0.05 0.05±0.03 0.38+-00..0023 *: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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