Datasheet Summary
TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
High Power Switching Applications Fast Switching Applications
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The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference)
- :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.)
- :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.)
Maximum Ratings (Ta=25℃)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc=25℃) Junction temperature Storage temperature range DC 1ms Symbol Ratings Unit
VCES VGES IC ICP PC Tj Tstg
600 ±20 15 45 35 150 -55～150
V V A W ℃ ℃
2001-7-
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TOSH...