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TOSHIBA
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
GT15J121
GT15J121
High Power Switching Applications Fast Switching Applications
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The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) ● :tr=0.03μs(typ.) High speed :tf=0.08μs(typ.) ● :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.
GT15J121 Datasheet
