GT20J101 is Silicon N-Channel IGBT manufactured by Toshiba .
| Part Number | Description |
|---|---|
| GT20J301 | Silicon N-Channel IGBT |
| GT20J311 | Silicon N-Channel IGBT |
| GT20J321 | Silicon N-Channel IGBT |
| GT20D101 | Silicon N-Channel Transistor |
| GT20D201 | Silicon P-Channel Transistor |
GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage:.
