GT25G101 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	GT25G101
Manufacturer	Toshiba
File Size	194.71 KB
Description	Silicon N-Channel IGBT
Datasheet	GT25G101 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC PC Tj Tstg RATING 400 ±25 25 170 1.3 75 150 −55~150 UNIT V V A W °C °C JEDEC JEITA TOSHIBA Weight : 1.