GT25G101 Overview
GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : ― ― 5 5 2000 0.1 0.15 4.0 4.5 ― MAX. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
GT25G101 Key Features
- High Input Impedance
- Low Saturation Voltage
- Enhancement−Mode
- 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−