Datasheet Details
| Part number | GT30J101 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 291.77 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT30J101_ToshibaSemiconductor.pdf |
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Overview: GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf =.
| Part number | GT30J101 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 291.77 KB |
| Description | Silicon N-Channel IGBT |
| Datasheet | GT30J101_ToshibaSemiconductor.pdf |
|
|
|
Compare GT30J101 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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