GT30J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications
Unit: mm
- -
- - The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 155 150
- 55~150 Unit V V A
W °C °C
JEDEC JEITA TOSHIBA Weight: 4.6 g
― ― 2-16C1C
2002-01-18
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c) Test Condition VGE = ±20 V, VCE...
