| Part number | GT30J121 |
|---|---|
| Datasheet | GT30J121_ToshibaSemiconductor.pdf |
| File Size | 182.80 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed:.
| Part Number | Description |
|---|---|
| GT30J122 | Silicon N-Channel IGBT |
| GT30J101 | Silicon N-Channel IGBT |
| GT30J301 | N-Channel IGBT |
| GT30J311 | N-Channel IGBT |
| GT30J322 | Silicon N-Channel IGBT |
| GT30J324 | Silicon N-Channel IGBT |
