GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
High Power Switching Applications Fast Switching Applications
Unit: mm
- Fourth-generation IGBT
- Enhancement mode type
- Fast switching (FS): Operating frequency up to 50 k Hz (reference)
High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 m J (typ.)
: Eoff = 0.80 m J (typ.)
- Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms
VCES VGES
IC ICP
Tj Tstg
±20
30 A
°C
- 55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in...
