Datasheet4U Logo Datasheet4U.com

GT30J121 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet preview – GT30J121

📁 Similar Datasheet

  • GT30J122A - Silicon N-Channel IGBT (Toshiba)
  • GT30J126 - Silicon N-Channel IGBT (Toshiba)
  • GT30J127 - 600V 200A IGBT MOSFET (ETC)
  • GT30J110SRA - Silicon N-Channel IGBT (Toshiba)
  • GT30J341 - Silicon N-Channel IGBT (Toshiba)
  • GT30J65MRB - Silicon N-Channel IGBT (Toshiba)
  • GT30 - Programmable Display (NAiS)
  • GT301L - Capacitive Touch Sensor (GreenChip)
  • GT30N135SRA - Silicon N-Channel IGBT (Toshiba)
  • GT316L - Capacitive Touch Sensor (GreenChip)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms VCES VGES IC ICP PC Tj Tstg 600 V ±20 V 30 A 60 170 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.
Published: |