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GT30J301 - N-Channel IGBT

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GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 155 150 −55~150 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 4.
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