GT30J311
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
Third-generation IGBT
Enhancement mode type
High speed
: tf = 0.30μs (Max.)
Low saturation voltage : VCE (sat) = 2.7V (Max.)
FRD included between emitter and collector
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector- Emitter Voltage
Gate- Emitter Voltage
DC Collector Current
1ms
Emitter- Collector Forward
Current
1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCES VGES
IC ICP IF IFM
Tj Tstg
RATING
600 ±20 30 60 30 60
- 55~150
EQUIVALENT CIRCUIT
UNIT
V V A A A A
°C °C
JEDEC JEITA TOSHIBA Weight: 3.65g
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