GT30J311 - N-Channel IGBT

Datasheet Details

Part number	GT30J311
Manufacturer	Toshiba Electronic Devices & Storage
File Size	480.95 KB
Description	N-Channel IGBT
Datasheet	GT30J311 Datasheet
Additional preview pages of the GT30J311 datasheet.

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Full PDF Text Transcription

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GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 145 150 −55~150 EQUIVALENT CIRCUIT UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: 3.

Published: Mar 23, 2005 |