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GT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.)
FRD : trr = 0.7μs (TYP.) z Low saturation voltage : VCE (sat) = 2.1V (TYP.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current
DC 1ms
Emitter−Collector Foward Current
DC 1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
Screw Torque
VCES VGES
IC ICP IECF IECFP
PC
Tj Tstg ―
900 ±25 60 120 15 120
170
150 −55~150
0.8
V V A
A
W °C °C N·m
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-21F2C
Weight: 9.
GT60M303 Datasheet
