GT60M303
GT60M303 is Silicon N-Channel IGBT manufactured by Toshiba.
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
HIGH POWER SWITCHING APPLICATIONS
Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.)
FRD : trr = 0.7μs (TYP.) z Low saturation voltage : VCE (sat) = 2.1V...
