GT60M303 datasheet by Toshiba.
| Part number | GT60M303 |
|---|---|
| Datasheet | GT60M303_ToshibaSemiconductor.pdf |
| File Size | 414.76 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : trr = 0.7μs (TYP.) z Low saturation voltage.
| Part Number | Description |
|---|---|
| GT60M301 | Silicon N-Channel MOSFET |
| GT60M302 | Silicon N-Channel MOSFET |
| GT60M104 | Silicon N-Channel IGBT |
| GT60J322 | Silicon N-Channel IGBT |
| GT60J323 | Silicon N-Channel IGBT |
| GT60N321 | Silicon N-Channel IGBT |
| GT60N322 | Silicon N-Channel IGBT |
