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JDP2S04E
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S04E
VHF~UHF Band RF Attenuator Applications
· · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low capacitance ratio: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C
JEDEC JEITA TOSHIBA
― ― 1-1G1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 mA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz Test Condition
Weight: 0.0014 g (typ.
JDP2S04E Datasheet
