JDV2S07S Description
JDV2S07S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S07S VCO for UHF Band Radio · · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner.