JDV2S14E
TOSHIBA Diode Silicon Epitaxial Planar Type
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Useful for VCO/TCXO
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- Small Package High Capacitance Ratio : C1V/C2.5V = 2.15 (typ.) Low Series Resistance : rs = 0.4 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125
- 55~125 Unit V °C °C
Weight: 0.0014 g
000707EAA1
- TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA...
