Datasheet Summary
2SK1529
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l plementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Gate- source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150
- 55~150 Unit V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range
Marking
Type
※ Lot Number Month (starting from alphabet A) Year (last number of the christian era)
JEDEC JEITA TOSHIBA
― ―...