Datasheet Summary
TK15A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK15A60D
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
- High forward transfer admittance: |Yfs| = 8.5 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ±...
