K16A60W
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 m A)
3. Packaging and Internal Circuit
TK16A60W
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25) (t = 1.0 s)
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR
600 ±30 15.8 63.2 40 231 4.0 15.8 63.2 150 -55 to 150 2000 0.6
W m J A
V Nm
Note:
Using continuously under heavy loads (e.g. the application of high...
