Datasheet4U Logo Datasheet4U.com

K16A60W - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipa.

📥 Download Datasheet

Datasheet Details

Part number K16A60W
Manufacturer Toshiba
File Size 241.64 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K16A60W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K1601 Sinewave MTRONPTI
K1601T CMOS/TTL MTRONPTI
K1601TE TCVCXO MTRONPTI
K1602 Sinewave MTRONPTI
K1602SE TCVCXO MTRONPTI

Other Datasheets by Toshiba

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W 1: Gate 2: Drain 3: Source TO-220SIS 4.
Published: |