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K1930

Manufacturer: Toshiba

K1930 datasheet by Toshiba.

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K1930 Datasheet Details

Part number K1930
Datasheet K1930-ToshibaSemiconductor.pdf
File Size 239.86 KB
Manufacturer Toshiba
Description 2SK1930
K1930 page 2 K1930 page 3

K1930 Overview

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance.

K1930 Key Features

  • Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.)
  • High forward transfer admittance : |Yfs| = 2.0 S (typ.)
  • Low leakage current : IDSS = 300 µA (max) (VDS = 800 V)
  • Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai
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