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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
2SK2013
Audio Frequency Power Amplifier Application
z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313
: VDSS = 180V : |Yfs| = 0.7 S (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
(Note 2)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
180 ±20
1 25 150 −55 to 150
V V A W °C °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.
K2013 Datasheet
