K2399
K2399 is Field Effect Transistor manufactured by Toshiba.
2SK2399
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV)
2SK2399
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm l 4 V gate drive l Low drain- source ON resistance
: RDS (ON) = 0.17 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) l Enhancement- mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive...
