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2SK2508
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2508
Switching Regulator and DC−DC Converter and Motor Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current
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Unit: mm
: RDS (ON) = 0.18 Ω (typ.) : |Yfs| = 13 S (typ.)
: IDSS = 100 μA (max) (VDS = 250 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
z Enhancement mode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 13 52 45 148 13 4.
K2508 Datasheet
