K2599
2SK2599
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV)
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2SK2599
Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| = 1.7 S (typ.)
Chopper Regulator, DC- DC Converter and Motor Drive Applications z Low drain- source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 2 5 12 1.3 112 2 0.13 150
- 55~150 Unit V V V A A A
Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1)
JEDEC
W m J A m J °C °C
― ― 2-8M1B
Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEITA TOSHIBA
Weight: 0.54 g (typ.)
Note: Using continuously...
