Datasheet Summary
2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm z Low drain- source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1...