K3310
K3310 is 2SK3310 manufactured by Toshiba.
2SK3310
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3310
Switching Regulator Applications
Unit: mm
- Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
- High forward transfer admittance: |Yfs| = 4.3 S (typ.)
- Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
- Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage...
