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K3462 - 2SK3462

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2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) www.DataSheet4U.com 2SK3462 Unit: mm Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 250 V) Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 3 6 20 36.