K3562 Description
2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current:.