Datasheet Summary
2SK3700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3700
Switching Regulator Applications
Unit: mm
- Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.)
- High forward transfer admittance: |Yfs| = 4.5 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...