Datasheet4U Logo Datasheet4U.com

K3799 - 2SK3799

Key Features

  • ase contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13 Free Datasheet http://www. dat.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K3702 2SK3702 Sanyo Semicon Device
K3703 2SK3703 Sanyo Semicon Device
K3704 2SK3704 Sanyo
K3706 2SK3706 Sanyo Semicon Device
K3706 N-Channel MOSFET VBsemi

Other Datasheets by Toshiba

Part Number Description
K3797 2SK3797
K3798 2SK3798
K3700 2SK3700
K3742 2SK3742
K3757 2SK3757

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.) Switching Regulator Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 8 24 50 1080 8 5 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. Gate 2. Drain 3.