Datasheet Summary
2SK4012
..
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm z Low drain- source ON-resistance
: RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance
: |Yfs| = 8.5 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1...