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2SK4012
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 0.33 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0 to 4.
K4012 Datasheet
