Full PDF Text Transcription for K8A60DA (Reference)
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K8A60DA. For precise diagrams, and layout, please refer to the original PDF.
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω ...
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lator Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Ts
K8A60DA Datasheet
