M12JZ47 Datasheet | Toshiba

.. SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off- State Voltage l R.M.S On- State Current l High mutating (dv / dt) l Isolation Voltage : VIsol = 1500V AC : VDRM = 400, 600V : IT (RMS) = 12A MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak Reverse Voltage SM12GZ47 SM12GZ47A SM12JZ47 SM12JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VIsol UNIT R. M. S. On- tate Current (Full Sine Waveform TC = 72°C) Peak One Cylce Surge On- State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 - 40~125 - 40~125 1500 A A A s A / µs W W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13- 10H1A Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 2001-07-10 .. SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III IV I SM12GZ47 SM12JZ47 Gate Trigger Current SM12GZ47A SM12JZ47A II III IV I II III IV Peak On- State Voltage Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage Critical Rate of Rise of Off- State Voltage at mutation SM12GZ47 SM12JZ47 SM12GZ47A SM12JZ47A SM12GZ47 SM12JZ47 SM12GZ47A SM12JZ47A VTM VGD IH Rth (j- c) ITM = 17A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (- ) , Gate (+) T2...