M25JZ51 Datasheet | Toshiba

SM25GZ51,SM25JZ51 TOSHIBA BI- DIRECTIONAL TRIODE THYRISTOR ILICON PLANAR TYPE SM25GZ51,SM25JZ51 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off- State Voltage : VDRM = 400, 600V l R.M.S On- State Current l High mutating (dv / dt) l Isolation Voltage .. Unit: mm : IT (RMS) = 25A : (dv / dt) c = 10V / µs : VIsol = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage SM25GZ51 SM25JZ51 SYMBOL VDRM IT (RMS) ITSM I t (Note 1) di / dt PGM PG (AV) VGM IGM Tj Tstg VIsol RATING 400 600 25 230 (50Hz) 253 (60Hz) 260 50 5 0.5 10 2 - 40~125 - 40~125 1500 UNIT V A A A s A / µs W W V A °C °C V R.M.S On- State Current (Full Sine Waveform Tc = 73°C) Peak One Cycle Surge On- State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On- State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) JEDEC JEITA TOSHIBA Weight: 5.9g ― ― 13- 16A1A Note 1: di / dt Test Condition VDRM = 0.5 × Rated ITM ≤ 40A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 2001-07-13 SM25GZ51,SM25JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On- State Voltage .. Gate Non- Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off- State Voltage Critical Rate of Rise of Off- State Voltage at mutation VTM VGD IH Rth (j- c) dv / dt (dv / dt) c ITM = 40A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = Rated, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = - 15A / ms IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) T2 (+) , Gate (+) T2 (+) , Gate (- ) T2 (- ) , Gate (- ) MIN ― ― ― ― ― ― ― ― 0.2 ― ― ― 10 TYP. ― ― ― ― ― ― ― ― ― ― ― 300 ― MAX 20 1.5 1.5 1.5 30 30 30 1.5 ― 60 1.3 ― ― V V m A °C / W V...