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MG200Q2YS65H - IGBT Module Silicon N Channel IGBT

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Part number MG200Q2YS65H
Manufacturer Toshiba Semiconductor
File Size 188.86 KB
Description IGBT Module Silicon N Channel IGBT
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www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.
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