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MG300Q2YS65H - IGBT Module Silicon N Channel IGBT

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Part number MG300Q2YS65H
Manufacturer Toshiba Semiconductor
File Size 190.61 KB
Description IGBT Module Silicon N Channel IGBT
Datasheet download datasheet MG300Q2YS65H Datasheet
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www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications · · · High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Weight: 430 g (typ.
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