MG600Q1US61 Datasheet | Toshiba

.. TOSHIBA IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications - - - - - High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 465 g (typ.) ― ― 2-109F1A Maximum Ratings (Tc = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80°C) DC (Tc = 80°C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting ¾ ¾ Rating 1200 ±20 600 600 5400 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A A W °C °C Vrms N- m N- m Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque 2002-10-04 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) IF = 600 A, VGE = 0 V Tc = 25°C Tc = 125°C Inductive load VCC = 600 V IC = 600 A VGE = ±15 V RG = 2.0 W Test Condition VGE = ±20 V, VCE = 0 V VCE = 1200 V, VGE = 0 V IC = 600 m A, VCE = 5V IC = 600 A, VGE = 15 V Tc = 25°C Tc = 125°C Min ¾ ¾ 6.0 ¾ ¾ ¾ ¾ ¾ ¾ ¾ (Note 1) ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ 7.0 2.1 2.7 50000 0.3 0.2 0.5 0.5 0.1 0.6 2.4 2.2 0.2 ¾ ¾ Max ±500 1 8.0 2.6 3.2 ¾ ¾ ¾ ¾ ¾ 0.3 ¾ 2.8 ¾ ¾ 0.023 0.05 V ms °C/W ms Unit n A m A V V p F VCE = 10 V, VGE = 0 V, f = 1 MHz IF = 600 A, VGE = -15 V, di/dt = 1500 A/ms Transistor stage Diode stage Note 1: Switching time and reverse recovery time test circuit and timing chart RG -VGE IC RG VGE 0 90% 10% VCC IC VCE 0 10% td (off)...