MG600Q1US61 - IGBT Module Silicon N Channel IGBT

Toshiba Semiconductor

Datasheet Details

Part number	MG600Q1US61
Manufacturer	Toshiba Semiconductor
File Size	263.60 KB
Description	IGBT Module Silicon N Channel IGBT
Datasheet	MG600Q1US61 Datasheet
Additional preview pages of the MG600Q1US61 datasheet.

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www.DataSheet4U.com MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications · · · · · High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm Equivalent Circuit C G E E JEDEC JEITA TOSHIBA Weight: 465 g (typ.

Published: Oct 4, 2007 |