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MG600Q1US61 Datasheet

IGBT Module Silicon N Channel IGBT

Manufacturer: Toshiba

MG600Q1US61 Overview

MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications · · · · · High input impedance High speed: tf = 0.3 µs (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case.

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