MIG100J101H Overview
MIG100J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J101H High Power Switching Applications Motor Control Applications l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. VCE (sat) = 2.5 V (Max.) toff = 3.0 µs (Max.) trr = 0.30 µs (Max.) l Outline.
MIG100J101H Key Features
- Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & o
- The electrodes are isolated from case
- High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 µs (Max.) trr = 0.30 µs (Max.)
- Outline : TOSHIBA 2-110A1A
- Weight : 520 g Equivalent Circuit 1. 7. GND (U) GND (W) 2. IN (U) 8. IN (W) 14. IN (Y) 3. 9. VD (U) VD (