MIG20J503H
Features
- The 4th generation trench gate thin wafer NPT IGBT is adopted.
- FRD is built in.
- The level shift circuit by high-voltage IC is built in.
- The simplification of a high side driver power supply is possible by the bootstrap system.
- Short circuit protection, over temperature protection, and the power supply under voltage protection function are built in.
- Short circuit protection and over temperature protection state are outputted.
- The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control.
- Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
1 2003-10-30
Pin Assignment
Marking
1 PGND U 2U 3 VBB U 4 PGND V 5V 6 VBB V 7 PGND W 8W 9 VBB W
Mark side
VCC U 30
FO U
IN U 28
IN X 27 SGND U 26
BS U CU
25 24
VCC V
FO V 22
IN V 21
IN Y...
