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MIG20J503H - Intelligent Power Module

General Description

Pin No.

Key Features

  • The 4th generation trench gate thin wafer NPT IGBT is adopted.
  • FRD is built in.
  • The level shift circuit by high-voltage IC is built in.
  • The simplification of a high side driver power supply is possible by the bootstrap system.
  • Short circuit protection, over temperature protection, and the power supply under voltage protection function are built in.
  • Short circuit protection and over temperature protection state are outputted.
  • T.

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Datasheet Details

Part number MIG20J503H
Manufacturer Toshiba
File Size 372.10 KB
Description Intelligent Power Module
Datasheet download datasheet MIG20J503H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Intelligent Power Module MIG20J503H MIG20J503H MIG20J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI (silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible.