Datasheet Summary
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One)
High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
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- Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 2 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current...