Datasheet Summary
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
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- Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A)
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Input voltage DC Collector current Pulse Collector power dissipation (1 device operation) Collector...