MP4411 Datasheet | Toshiba

.. TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver Industrial Applications Unit: mm - - - - - - - 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 3 12 2.2 4.4 28 140 3 0.22 m J EART Tch Tstg 0.44 150 - 55 to 150 °C °C Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-32C1D Weight: 3.9 g (typ.) PDT EAS IAR EAR W m J A Single pulse avalanche energy (Note 1) Avalanche current 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation Channel temperature Storage temperature range Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 m H, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 2004-07-01 .. Array Configuration Thermal Characteristics 2 3 5 4 1 6 9 10 12 7 Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 °C ΣRth (ch-c) 4.46 °C/W...