MT3S08T - SILICON NPN EPITAXIAL PLANAR TYPE

Toshiba

Datasheet Details

Part number	MT3S08T
Manufacturer	Toshiba
File Size	106.06 KB
Description	SILICON NPN EPITAXIAL PLANAR TYPE
Datasheet	MT3S08T Datasheet

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www.DataSheet4U.com MT3S08T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S08T VHF~UHF Band Low Noise Amplifier Applications · · Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 8 1.5 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA ― ― 2-1B1A g (typ.) Marking 3 TOSHIBA Weight: T 1 H 2 1 2002-01-23 www.DataSheet4U.