| Part number | MT3S08T |
|---|---|
| Datasheet | MT3S08T_ToshibaSemiconductor.pdf |
| File Size | 106.06 KB |
| Manufacturer | Toshiba |
| Description | SILICON NPN EPITAXIAL PLANAR TYPE |
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¾ ¾ ¾ 0.55 Max 0.1 1 140 0.95 Unit mA mA ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity.
| Part Number | Description |
|---|---|
| MT3S03AS | SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AU | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AE | VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT3S04AS | SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AT | VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
| MT3S04AU | TRANSISTOR SILICON NPN EPITAXIAL TYPE |
| MT3S05T | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S06S | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S06U | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
