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MT3S35T - CMOS ST-BUS Family Multiple Rate Digital Switch

Features

  • Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 24 12 100 150.
  • 55~150 Unit V V V mA mA mW °C °C JEITA.

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Datasheet Details

Part number MT3S35T
Manufacturer Toshiba Semiconductor
File Size 149.39 KB
Description CMOS ST-BUS Family Multiple Rate Digital Switch
Datasheet download datasheet MT3S35T Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com MT3S35T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S35T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES · · Low Noise Figure :NF=1.4dB (@f=2GHz) High Gain:|S21e| =13.0dB (@f=2GHz) 2 Marking 3 Q2 1 2 TESM JEDEC ― ― 2-1B1A Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 24 12 100 150 −55~150 Unit V V V mA mA mW °C °C JEITA TOSHIBA Weight:0.0022g (typ.) 1 2002-08-19 www.DataSheet4U.
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