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MT3S41FS - VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION

Features

  • High Gain:|S21e| =10.0dB (@f=2GHz) 2 0.6±0.05.
  • Low Noise Figure :NF=1.2dB (@f=2GHz) 1 3 0.1±0.05 Marking 2 3 0.1±0.05 2 26 1 +0.02 0.48 -0.04 Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 8 4.5 1.5 80 40 100 150.
  • 55~150 2 Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Unit V V V mA mA mW °C.

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Datasheet Details

Part number MT3S41FS
Manufacturer Toshiba Semiconductor
File Size 149.88 KB
Description VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Datasheet download datasheet MT3S41FS Datasheet
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www.DataSheet4U.com MT3S41FS TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S41FS VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION 0.35±0.05 0.15±0.05 1.0±0.05 0.8±0.05 Unit:mm 0.2±0.05 FEATURES · High Gain:|S21e| =10.0dB (@f=2GHz) 2 0.6±0.05 · Low Noise Figure :NF=1.2dB (@f=2GHz) 1 3 0.1±0.05 Marking 2 3 0.1±0.05 2 26 1 +0.02 0.48 -0.04 Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 8 4.5 1.5 80 40 100 150 −55~150 2 Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Unit V V V mA mA mW °C °C 0.1±0.05 1.BASE 2.EMITTER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.
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