MT6L58AE- TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
MT6L58AFS- VHF-UHF Band Low Noise Amplifier Application
MT6L52AE- VHF-UHF Band Low Noise Amplifier Applications
MT6L53S- VHF-UHF Band Low Noise Amplifier Application
MT6L54E- VHF-UHF Band Low Noise Amplifier Application
MT6L55E- VHF-UHF Band Low Noise Amplifier Application
MT6L55FS- VHF-UHF Band Low Noise Amplifier Application
MT6L56E- VHF-UHF Band Low Noise Amplifier Application
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AT
MT6L58AT
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6
Mounted Devices
Three-pins (SSM/TESM) mold products are corresponded.
Q1: SSM (TESM)
MT3S06S (MT3S06T)
Q2: SSM (TESM)
MT3S03AS (MT3S03AT)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
Q1
Q2
Unit
VCBO VCEO VEBO
IC IB PC Tj Tstg
10
10
V
5
5
V
1.5
2
V
15
40
mA
7
10
mA
150
mW
125
°C
−55~125
°C
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2JA1C
Weight: 0.0045 g (typ.