RN1005 Datasheet | Toshiba

RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN2001~RN2006 Unit: mm Equivalent Circuit and Bias Resister Values Type No. RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage...