RN1444 Overview
RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) l Low on resistance:.
RN1444 Key Features
- High emitter-base voltage: VEBO = 25V (min)
- High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)
- Low on resistance: RON = 1Ω (typ.) (IB = 5mA)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit JEDEC EIAJ TOSHIBA Weight