RN2010 Datasheet | Toshiba

RN2010,RN2011 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2010,RN2011 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z plementary to RN1010, RN1011 Unit: mm Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC- Tj Tstg Rating - 50 - 50 - 5 - 100 400 150 - 55~150 Unit V V V m A m W °C °C JEDEC TO- 92 JEITA SC- 43 TOSHIBA 2- 5F1B Weight: 0.21g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating...